The Fundamental Mechanism Behind Colossal Permittivity in Oxides

Ned Taylor, Frank Davies, Shane Davies, Conor Price, and Steve Hepplestone have published an article describing the atomic-scale mechanism that gives rise to colossal permittivity within samples of CaCu3Ti4O12 (CCTO). This work was conducted at the University of Exeter during Ned, Frank, Shane and Conor’s PhDs.

For two decades, experimental samples of CCTO have shown extremely high values of relative permittivity (typically on the order of 104). Thus far, it has been shown that such high permittivity values are not present in the bulk material, and that, instead, this phenomenon is caused by the formation of a strongly insulating material at the boundary between CCTO grains (which are characterised as semiconducting) – commonly termed as the internal barrier layer capacitance (IBLC).

In this article, the authors explore the origin of this phenomenon at the atomic scale in order to determine the exact cause of the IBLC. The authors identify the formation of a thin metallic region at the interface between the insulating grain boundaries and the semiconducting grains. This metallic layer could allow for a rapid dielectric response from the large grains, but prevent transport between grains, due to the insulating boundary; this manifests itself as a large dielectric response, or high permittivity, of the sample.

In understanding the mechanism behind this colossal permittivity, the capabilities and limits of this phenomenon can be better understood. This article can aid in the engineering of artificial systems with colossal permittivity.

To find out more, follow the link to the article:

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